DETERMINATION OF THE FINE-STRUCTURE CONSTANT USING GAAS-AL_XGA_1-XAS HETEROSTRUCTURESTSUI DC; GOSSARD AC; FIELD BF et al.1982; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1982 PUBL. 1981; VOL. 48; NO 1; PP. 3-6; BIBL. 18 REF.Article

CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE LASERS: STRUCTURES AND ELECTROOPTICAL CHARACTERISTICSBOTEZ D.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 12; PART. 1; PP. 2290-2309; BIBL. 67 REF.Article

OPERATING CHARACTERISTICS OF GAALAS LASERS WITH ELEVATED FACET REFLECTIVITIESHALL DG; BEAR PD.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 19; PP. 3283-3284; BIBL. 11 REF.Article

LOW-THRESHOLD HIGH-T₀ CONSTRICTED DOUBLE HETEROJUNCTION ALGAAS DIODE LASERSBOTEZ D; CPNNOLLY JC.1980; ELECTRON. LETT.; GBR; DA. 1980; VOL. 16; NO 25-26; PP. 942-944; BIBL. 17 REF.Article

GAIN BROADENING MECHANISM IN VARIOUS GAALAS LASER STRUCTURESRUEHLE W; BROSSON P.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5949-5953; BIBL. 16 REF.Article

INJECTION LOCKING CHARACTERISTICS OF AN ALGAAS SEMICONDUCTOR LASERKOBAYASHI S; KIMURA T.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 9; PP. 915-917; BIBL. 6 REF.Article

BANDWIDTH-LIMITED PICOSECOND PULSE GENERATION IN AN ACTIVELY MODE-LOCKED GAALAS DIODE LASERHOLBROOK MB; SLEAT WE; BRADLEY DJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 59-61; BIBL. 14 REF.Article

PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL, GA) AS/GAAS HETEROSTRUCTURESDRUMMOND TJ; KOPP W; FISCHER R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1238-1240; BIBL. 13 REF.Article

SCHOTTKY BARRIER RESTRICTED GAALAS LASERTEMKIN H; CHIN AK; DUTT BV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 701-703; BIBL. 11 REF.Article

FACET DEGRADATIONS IN GA_1-XAL_XAS/GA_1-YAL_YAS DOUBLE-HETEROSTRUCTURE LASERSHAYAKAWA T; YAMAMOTO S; SAKURAI T et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6068-6073; BIBL. 17 REF.Article

GAALAS STRIPE LASER WITH STABLE TRANSVERSE MODE STRUCTURELANDREAU J; DELPECH P; CHARIL J et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 2.4.1-2.4.4; BIBL. 3 REF.Conference Paper

IMPROVEMENTS OF THE ELECTRO-OPTIC PROPERTIES OF (AL, GA) AS LASERS BY MEANS OF REDUCED REFLECTION DIELECTRIC FACET COATINGSNASH FR; PAOLI TL; HARTMAN RL et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 48-54; BIBL. 40 REF.Article

A SIMPLE METHOD OF DETERMINING THE AL CONCENTRATION IN GAALAS LAYERS USED IN DOUBLE HETEROSTRUCTURE LASERSBROSSON P; RIBERO CA.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 887-888; BIBL. 6 REF.Article

LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAPAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANTBURNHAM RD; STREIFER W; SCIFRES DR et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1095-1097; BIBL. 18 REF.Article

EFFECT LUMINESCENCE BAND CREATED IN (AL, GA) AS MULTILAYERS BY ATHERMAL LASER PROCESSINGSALATHE RP; GILGEN HH; RYTZ FROIDEVAUX Y et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 10; PP. 1989-1995; BIBL. 15 REF.Article

CARRIER DENSITY DEPENDENCE OF REFRACTIVE INDEX IN ALGAAS SEMICONDUCTOR LASERSITO M; KIMURA T.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 9; PP. 910-911; BIBL. 11 REF.Article

VISIBLE-LIGHT-EMITTING TS LASERSWADA M; ITOH K; SUGINO T et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 8; PP. 1505-1507; BIBL. 10 REF.Article

CW ROM-TEMPERATURE OPERATION OF GAALAS SINGLE QUANTUM WELL VISIBLE (7300 A) DIODE LASERS AT 100 MWBURNHAM RD; LINDSTROEM C; PAOLI TL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 937-939; BIBL. 19 REF.Article

LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPEDE HERSEE S; BALDY M; ASSENAT P et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 618-620; BIBL. 7 REF.Article

SPIN-POLARIZED PHOTOELECTRON EMISSION STUDY OF AL_XGA_1-X AS ALLOYS GROWN BY MOLECULAR BEAM EPITAXYCICCACCI F; ALVARADO SF; VALERI S et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4395-4398; BIBL. 16 REF.Article

COHERENCE CHARACTERISTICS OF A SINGLE-MODE GAALAS LASER DIODEYOSHIKAWA M; SUZUKI N; SUZUKI T et al.1981; J. OPT. SOC. AM. (1930); ISSN 0030-3941; USA; DA. 1981; VOL. 71; NO 2; PP. 171-174; BIBL. 10 REF.Article

EFFECT OF GROWTH TEMPERATURE ON THE PHOTOLUMINESCENT SPECTRA FROM SN-DOPED GA_1-XAL_XAS GROWN BY MOLECULAR BEAM EPITAXYSWAMINATHAN V; TSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 5; PP. 347-349; BIBL. 18 REF.Article

OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA_1-XAL_XA_S MULTI-QUANTUM WELL STRUCTURESWEISBUCH C; DINGLE R; GOSSARD AC et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 8; PP. 709-712; BIBL. 7 REF.Article

EFFECT OF GROWTH TERRACES ON THRESHOLD CURRENT DENSITY OF (GAAL) AS DOUBLE-HETEROSTRUCTURE LASERSHIMA K; SEGI K; IMAI H et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 341-343; BIBL. 6 REF.Article

IMPROVEMENT OF PHOTOLUMINESCENCE PROPERTY OF (GAAL) AS DOUBLE-HETEROSTRUCTURE LASER WAFER WITH BUFFER LAYERSHIMA K; TAKAGI N; SEGI K et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 395-397; BIBL. 13 REF.Article